2N5320 NPN Silicon Transistor, TO-39 (Replaces NTE16005)

2N5320 NPN Silicon Transistor

NPN silicon BJT for high-current, general-purpose switching and amplifier applications, in a TO-39 metal can. Replacement for NTE16005.

Specifications

• Type: NPN silicon BJT, through-hole
• Package: TO-39 metal can
• Collector-emitter voltage (VCEO): 75 V
• Collector-base voltage (VCBO): 100 V
• Emitter-base voltage (VEBO): 6-7 V (varies by manufacturer)
• Continuous collector current (IC): 2 A
• Base current (IB): 1 A max
• Power dissipation: 10 W (TC = 25°C)
• DC current gain (hFE): 30-175 @ 500 mA, 4 V
• Collector-emitter saturation voltage (VCE(sat)): 0.5 V max @ 500 mA, 50 mA
• Transition frequency (fT): 50 MHz
• Junction temperature: -65°C to +200°C

Includes 1 transistor per pack.