{"product_id":"2n5320-npn-silicon-transistor-to-39-replaces-nte16005","title":"2N5320 NPN Silicon Transistor, TO-39 (Replaces NTE16005)","description":"\u003cp\u003e\u003cstrong\u003e2N5320 NPN Silicon Transistor\u003c\/strong\u003e\u003c\/p\u003e\n\u003cp\u003eNPN silicon BJT for high-current, general-purpose switching and amplifier applications, in a TO-39 metal can. Replacement for NTE16005.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003eSpecifications\u003c\/strong\u003e\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eType: NPN silicon BJT, through-hole\u003c\/li\u003e\n\u003cli\u003ePackage: TO-39 metal can\u003c\/li\u003e\n\u003cli\u003eCollector-emitter voltage (VCEO): 75 V\u003c\/li\u003e\n\u003cli\u003eCollector-base voltage (VCBO): 100 V\u003c\/li\u003e\n\u003cli\u003eEmitter-base voltage (VEBO): 6-7 V (varies by manufacturer)\u003c\/li\u003e\n\u003cli\u003eContinuous collector current (IC): 2 A\u003c\/li\u003e\n\u003cli\u003eBase current (IB): 1 A max\u003c\/li\u003e\n\u003cli\u003ePower dissipation: 10 W (TC = 25°C)\u003c\/li\u003e\n\u003cli\u003eDC current gain (hFE): 30-175 @ 500 mA, 4 V\u003c\/li\u003e\n\u003cli\u003eCollector-emitter saturation voltage (VCE(sat)): 0.5 V max @ 500 mA, 50 mA\u003c\/li\u003e\n\u003cli\u003eTransition frequency (fT): 50 MHz\u003c\/li\u003e\n\u003cli\u003eJunction temperature: -65°C to +200°C\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cp\u003eIncludes 1 transistor per pack.\u003c\/p\u003e","brand":"TekShack","offers":[{"title":"Default Title","offer_id":67574293037353,"sku":"2N5320","price":10.5,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0887\/2670\/0329\/files\/6b979636-b148-4a83-ac66-f5d53e266034.png?v=1791295447","url":"https:\/\/tekshack.com\/products\/2n5320-npn-silicon-transistor-to-39-replaces-nte16005","provider":"TekShack","version":"1.0","type":"link"}